bias resistor t ransistor npn silicon surface mount t ransistor with monolithic bias resistor network device marking and resistor values device marking r1 (k) r2 (k) shipping h7 200 3000/tape & reel leshan radio company, ltd. 1/3 ? 10000/tape & reel we declare that the material of product compliance with rohs requirements. ldtc125tet1g 1 ) b u i l t- in b i as res i st ors e n a b l e th e co nfi g ur ati on of a n in ve rte r circui t w i thou t con n e cting ex te rn al in pu t resistors (see equivalent circuit). 2 ) t he bi as r e s i sto r s c o n s ist of th i n -fi l m r e s i sto r s w i t h co mp le te i s ol a t i o n to al low posi t i v e bia s ing o f the i npu t. t h ey a l so ha ve the ad van t age of a l mo st co mpl e tely eliminating p a rasitic ef fect s. 3 ) o n l y th e on/ of f co n d it i ons n e ed to be set for o p e r a t i on, making the device design easy . inverter , interface, driver features ? ? applications ldtc125tet1g ldtc125tet3g h7 200 z a b solute maximum ratings (t a= 25 c) z electrical ch aracteristics (t a= 25 c) 3 collec t or 2 emitter 1 base r1 parameter symbol v cbo v ceo v ebo i c pc tj tstg limits 50 50 5 100 200 150 ? 55 to + 150 unit v v v ma mw c c collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature parameter symbol min. typ. max. unit conditions bv cbo bv ceo bv ebo i cbo i ebo v ce(sat) h fe f t r 1 50 50 5 ? ? ? 100 ? 140 ? ? ? ? ? ? 250 250 200 ? ? ? 0.5 0.5 0.3 600 ? 260 v v v a a v ? mhz k ? i c = 50 a i c = 1ma i e = 50 a v cb = 50v v eb = 4v i c = 0.5ma , i b = 0.05ma i c = 1ma , v ce = 5v v ce = 10v , i e = ? 5ma , f = 100mhz ? collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio transition frequency input resistance ? ? characteristics of built-in transistor 1 2 3 sc-89
leshan radio company, ltd. 2/3 z electrical ch aracteristic cu rv es ldtc125tet1g 1k 500 200 100 50 20 10 5 2 1 10 20 50 100 200 500 1m 2m 5m 10m v ce = 5v fig.1 dc current gain vs. collector current dc current gain : h fe collector current : i c (a) ta = 100 c ta = 25 c ta = ? 40 c 1 500m 200m 100m 50m 20m 10m 5m 2m 1m 10 20 50 100 200 500 1m 2m 5m 10m i c /i b = 10/1 fig.2 collector-emitter saturation voltage vs. collector current collector saturation voltage : v ce(sat) (v) collector current : i c (a) ta = 100 c ta = 25 c ta = ? 40 c
3/3 ldtc125tet1g leshan radio company, ltd. notes: 1.dimensioning and tolerancing per ansi y14.5m, 1982. 2.controlling dimension: millimeters 3.maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4.463c-01 obsolete, new standard 463c-02. sc-89
|
